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30KV 3A High Voltage Microwave Diode

Type:Rectifier stack
Model:2CL30KV3A
Material:Epoxy resin
Reverse surge voltage Vrrm:30KV
Working temperature:-40 to +150℃
Average forward current IF:3.0A
Product name:30KV 3A High Voltage Microwave Diode

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Features of 30KV 3A High Voltage Microwave Diode:

30KV 3A High Voltage Microwave Diode

1. Adopt newest technique for tube core.
2. Low current leackage, low power, and high reliablility
3. Have high voltage rectifier, isolation, and protection function.

Maximum rating of 30KV 3A High Voltage Microwave Diode:

Parameter Name	Marks	Test condition	Test value	Unit
Repetitive peak inverse voltage	VRRM		30	KV
Average forward rectified current	IO		3.0	A
The non repetitive peak surge current	IFSM	Ta=25℃, rated load, half-wave, single phase 20KHZ	200	A
Tj Operating Junction Temperature Range	Tj	Sine half wave voltage	150	℃
Environment temperature during working	Tc		120	℃
Storage temperature	Tstg		-40-120	℃

Electrical specification of 30KV 3A High Voltage Microwave Diode:

Rated Value	Sign	Condition	Test value	Unit
Maximum peak forward voltage	V	IF=5A	42	V
The largest reverse recovery time	trr	IF=2mA IR=4mA		uS
Max Reverse Current	IR1	VR=VRRM, 25℃	3.0	uA
Max Reverse Current	IR2	VR=VRRM, 100℃	30	uA
Max junction capacity	Cj		0.8	pF